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Nathalie Rolland

Observed names: Haese-Rolland, N., N Rolland, N. Haese–Rolland, N. Rolland, Nathalie Haese-Rolland, ROLLAND-HAESE, Nathalie, Rolland, N., Rolland, N. (Nathalie), Rolland, Nathalie, Rolland-Haese, N.
Institutions: Centre National de la Recherche Scientifique, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication Avancée, Université Polytechnique Hauts-de-France, Centrale Lille Institut
Observed institutions: Centre National de la Recherche Scientifique, Université de Lille, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Réseau sur le Stockage Electrochimique de l'énergie, STMicroelectronics (France), Institut d'Electronique, de Microélectronique et de Nanotechnologie, Laboratoire d'Électronique des Technologies de l'Information, Laboratoire de Physique des Lasers, Atomes et Molécules, Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication Avancée, Université Lille 1, Université de Picardie Jules Verne, University of York, Université Lille Nord de France, Université Polytechnique Hauts-de-France, Centrale Lille Institut
ORCID: 0000-0003-2867-9820
Observed ORCID: 0000-0003-2867-9820
OpenAlex ID: A5114832895
First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz
2012 · F. Medjdoub, M. Zegaoui, et al. · IEEE Electron Device Letters · 94
Silicon‐Microtube Scaffold Decorated with Anatase TiO2 as a Negative Electrode for a 3D Litium‐Ion Microbattery
2014 · Etienne Eustache, Pascal Tilmant, et al. · Advanced Energy Materials · 88
Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors
2011 · Farid Medjdoub, Malek Zegaoui, et al. · Applied Physics Express · 86
High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate
2011 · F. Medjdoub, M. Zegaoui, et al. · IEEE Electron Device Letters · 84
A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI
2010 · Alexandre Siligaris, Yasuhiro Hamada, et al. · IEEE Journal of Solid-State Circuits · 71
1900 V, 1.6 mΩ cm2AlN/GaN-on-Si power devices realized by local substrate removal
2014 · Nicolas Herbecq, Isabelle Roch-Jeune, et al. · Applied Physics Express · 69
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Micro-patterning of LiPON and lithium iron phosphate material deposited onto silicon nanopillars array for lithium ion solid state 3D micro-battery
2011 · C. Lethien, M. Zegaoui, et al. · Microelectronic Engineering · 58
Packaging methodology for RF devices using a BCB membrane transfer technique
2006 · S Seok, N Rolland, et al. · Journal of Micromechanics and Microengineering · 49
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Theoretical and experimental study of a thermal damper based on a CNT/PCM composite structure for transient electronic cooling
2017 · Christophe Kinkelin, Stéphane Lips, et al. · Energy Conversion and Management · 47
Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices
2013 · Farid Medjdoub, Bertrand Grimbert, et al. · Applied Physics Express · 46
Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate
2011 · Farid Medjdoub, N. Waldhoff, et al. · IEEE Electron Device Letters · 46
Path‐loss model of the 60‐GHz indoor radio channel
2002 · M. Fryziel, C. Loyez, et al. · Microwave and Optical Technology Letters · 46
Transposition of a baseband UWB signal at 60 GHz for high data rate indoor WLAN
2005 · N. Deparis, A. Bendjabballah, et al. · IEEE Microwave and Wireless Components Letters · 43
Sputtered Titanium Nitride: A Bifunctional Material for Li-Ion Microbatteries
2015 · Jeremy Freixas, Etienne Eustache, et al. · Journal of The Electrochemical Society · 42
Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements
2016 · Nandha Kumar Subramani, Amit Kumar Sahoo, et al. · IEEE Transactions on Microwave Theory and Techniques · 41
UWB in Millimeter Wave Band With Pulsed ILO
2008 · N. Deparis, C. Loyez, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 40
Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate
2011 · F. Medjdoub, M. Zegaoui, et al. · Applied Physics Letters · 38
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Beyond 100 GHz AlN/GaN HEMTs on silicon substrate
2011 · F. Medjdoub, M. Zegaoui, et al. · Electronics Letters · 37
Exploit the Bandwidth Capacities of the Perfluorinated Graded Index Polymer Optical Fiber for Multi-Services Distribution
2011 · Christophe Lethien, Christophe Loyez, et al. · Polymers · 36
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Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon
2011 · Farid Medjdoub, Malek Zegaoui, et al. · Applied Physics Express · 35
Design, Fabrication, and Measurement of Benzocyclobutene Polymer Zero-Level Packaging for Millimeter-Wave Applications
2007 · Seonho Seok, Nathalie Rolland, et al. · IEEE Transactions on Microwave Theory and Techniques · 35
Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz
2012 · F. Medjdoub, Y. Tagro, et al. · IEEE Electron Device Letters · 32
Energy-Autonomous Picocell Remote Antenna Unit for Radio-Over-Fiber System Using the Multiservices Concept
2012 · Christophe Lethien, David Wake, et al. · IEEE Photonics Technology Letters · 32
Circularly Polarized Millimeter-Wave Antenna Using 0-Level Packaging
2010 · Etienne Herth, Nathalie Rolland, et al. · IEEE Antennas and Wireless Propagation Letters · 30
A 60 GHz UWB impulse radio transmitter with integrated antenna in CMOS65nm SOI technology
2011 · A Siligaris, N Deparis, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 28
Works count: 273
Citation count: 2,309
H-index: 26
I10-index: 65
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