Work

First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz

Year: 2012

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2012.2198192

Authors: F. Medjdoub, M. Zegaoui, B. Grimbert, D. Ducatteau, N. Rolland, P. A. Rolland

Institutions: Centre National de la Recherche Scientifique, Institut d'Electronique, de Microélectronique et de Nanotechnologie

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2018404067

FWCI: 4.519

Cites: 17

Cited by: 94

Related to: 10