Award

20003555

Funder: Korea Evaluation Institute of Industrial Technology

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Funded outputs count: 5

Funder award ID: 20003555

OpenAlex ID: G6184507652

Achieving High Dielectric Constants in Tetragonal Single‐Phase ZrHfO2 Thin Films through the Atomic Layer Deposition Process Using a Mixed Precursor

2022 · Jenam Kim, Young Uk Ryu, et al. · physica status solidi (a) · 8

Y-doped HfO2 deposited by atomic layer deposition using a cocktail precursor for DRAM capacitor dielectric application

2021 · Jenam Kim, Byung Seok Kim, et al. · Ceramics International · 37

An Empirical Investigation on the Effect of Oxygen Vacancy in ZrO2 Thin Film on the Frequency-Dependent Capacitance Degradation in the Metal–Insulator–Metal Capacitor

2021 · Dong Hee Han, Seungwoo Lee, et al. · IEEE Transactions on Electron Devices · 16

Chemistry of ruthenium as an electrode for metal–insulator–metal capacitor application

2020 · Eui Young Jung, Jeongil Bang, et al. · Nanotechnology · 10

Modulation of the adsorption chemistry of a precursor in atomic layer deposition to enhance the growth per cycle of a TiO 2 thin film

2020 · Yeonchoo Cho, Sang Hyeon Kim, et al. · Physical Chemistry Chemical Physics · 12