Work

Y-doped HfO2 deposited by atomic layer deposition using a cocktail precursor for DRAM capacitor dielectric application

Year: 2021

Type: article

Source: Ceramics International

DOI: 10.1016/j.ceramint.2021.10.097

Authors: Jenam Kim, Byung Seok Kim, Ae Jin Lee, Dong Hee Han, Ji Hyeon Hwang, Youngjin Kim, Ki-Chang Song, Hansol Oh, Sangho Kim, Yongjoo Park, Woojin Jeon

Institutions: Kyung Hee University, Korea Institute of Science and Technology, SK Group (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Korea Evaluation Institute of Industrial Technology, Korea Institute of Energy Technology Evaluation and Planning

Awards: G4545251434, G5672506066, G6184507652, G6913275153

OpenAlex ID: W3211226243

FWCI: 1.762

Cites: 45

Cited by: 37

Related to: 10