Development of wide-bandgap oxide epitaxial thin films by multi-wavelength excimer laser processing and substrates modification
Description: Epitaxial thin films of β-Ga2O3(-201) with optical bandgap of 4.9eV was obtained on a NiO(111)-buffered α-Al2O3(0001) substrate at room-temperature by following approaches; (1) modification of crystal nucleation sites and growth direction on atomically stepped surface of the substrates, (2) reduction of planar lattice mismatch by introduction of a buffer layer, and (3) non-equilibrium solid-phase crystallization by excimer laser processing. The characteristic nucleation at step-edges was experimentally observed, and (111)-planes of rock-salt type crystals were demonstrated as good buffer layers owing to their homogeneous distance of anion and cation planes as well as their planar symmetry and lattice parameter. The morphology of substrates, and the structure of buffer layers were revealed to have impact on epitaxial formation of wide-bandgap oxide semiconductor thin films by excimer laser processing at room-temperature.
Amount: ¥4,160,000
Funding type: fellowship
Funder scheme: Grant-in-Aid for Young Scientists (B)
Start date: 2015-04-01
End date: 2019-03-31
Investigator: Akifumi Matsuda
Institution: Tokyo Institute of Technology
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Funded outputs count: 4
Funder award ID: 15K20988
OpenAlex ID: G8562881113