Work

Room-temperature fabrication of highly oriented β-Ga2O3 thin films by excimer laser annealing

Year: 2015

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2015.04.026

Authors: Daishi Shiojiri, Ryosuke Yamauchi, Daiji Fukuda, Nobuo Tsuchimine, Satoru Kaneko, Akifumi Matsuda, Mamoru Yoshimoto

Institutions: Tokyo Institute of Technology, Toshima Manufacturing (Japan), Kanagawa Industrial Technology Center

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Nippon Sheet Glass Foundation for Materials Science and Engineering, Kato Foundation for Promotion of Science, Japan Society for the Promotion of Science

Awards: Room-temperature solid-phase epitaxial crystallization of wide-gap semiconducting Ga2O3 thin films, Development of wide-bandgap oxide epitaxial thin films by multi-wavelength excimer laser processing and substrates modification

OpenAlex ID: W644133240

FWCI: 0.654

Cites: 33

Cited by: 19

Related to: 10