Get started
Keyword

threading dislocations

Description: Line defects in crystalline materials that extend through epitaxial layers and can affect their structural and electronic properties.
OpenAlex ID: keywords/threading-dislocations
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 · Shuji Nakamura · Science · 1,874
Electrically pumped continuous-wave III–V quantum dot lasers on silicon
2016 · Siming Chen, Wei Li, et al. · Nature Photonics · 876
Bonding of silicon wafers for silicon-on-insulator
1988 · W. P. Maszara, G. Goetz, et al. · Journal of Applied Physics · 875
Substrates for gallium nitride epitaxy
2002 · L. Liu, J.H. Edgar · Materials Science and Engineering R Reports · 833
Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
1996 · B. Heying, X. H. Wu, et al. · Applied Physics Letters · 831
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
1999 · Takashi Mukai, Motokazu Yamada, et al. · Japanese Journal of Applied Physics · 757
PDF
Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration
2020 · John F. Geisz, Ryan M. France, et al. · Nature Energy · 713
PDF
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 · Shigefusa F. Chichibu, Akira Uedono, et al. · Nature Materials · 702
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
2018 · Shinhyun Choi, Scott H. Tan, et al. · Nature Materials · 689
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
1997 · Ok-Hyun Nam, Michael D. Bremser, et al. · Applied Physics Letters · 650
Scattering of electrons at threading dislocations in GaN
1998 · Nils G. Weimann, Lester F. Eastman, et al. · Journal of Applied Physics · 617
Defects in epitaxial multilayers
1976 · J.W. Matthews, A.E. Blakeslee · Journal of Crystal Growth · 595
Defects in epitaxial multilayers
1975 · J.W. Matthews, A.E. Blakeslee · Journal of Crystal Growth · 536
Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
1997 · S. J. Rosner, E. C. Carr, et al. · Applied Physics Letters · 535
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
2000 · B. Heying, R. Averbeck, et al. · Journal of Applied Physics · 489
Structural characterization of nonpolar (1120) a -plane GaN thin films grown on (1102) r -plane sapphire
2002 · M. D. Craven, S. H. Lim, et al. · Applied Physics Letters · 486
40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions
2008 · J. F. Geisz, D. J. Friedman, et al. · Applied Physics Letters · 480
Degradation of hexagonal silicon-carbide-based bipolar devices
2006 · M. Skowronski, S. Ha · Journal of Applied Physics · 474
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
1998 · X. H. Wu, C. R. Elsass, et al. · Applied Physics Letters · 463
Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3
1996 · X. H. Wu, L. M. Brown, et al. · Journal of Applied Physics · 430
Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
1993 · R. C. Powell, N.-E. Lee, et al. · Journal of Applied Physics · 422
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
2000 · Kazumasa Hiramatsu, Katsuya Nishiyama, et al. · Journal of Crystal Growth · 415
Defect structure in selectively grown GaN films with low threading dislocation density
1997 · Akira Sakai, Haruo Sunakawa, et al. · Applied Physics Letters · 414
Suppression of Nonradiative Recombination by V-Shaped Pits in GaInN/GaN Quantum Wells Produces a Large Increase in the Light Emission Efficiency
2005 · A. Hangleiter, F. Hitzel, et al. · Physical Review Letters · 409
Characterization of threading dislocations in GaN epitaxial layers
2000 · T. Hino, S. Tomiya, et al. · Applied Physics Letters · 404
Works count: 4,888
Citation count: 100,600
Year
Topic
Type