Work

Modeling of gate-induced drain leakage mechanisms in silicon-germanium channel pFET

Year: 2014

Type: conference-paper

Source: IEEE International Conference on Emerging Electronics (ICEE)

DOI: 10.1109/icemelec.2014.7151200

Authors: Vishal A. Tiwari, Andreas Scholze, Rama Divakaruni, Deleep R. Nair

Institutions: Indian Institute of Technology Madras, IBM (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Indian Institute of Technology Madras

OpenAlex ID: W1494481980

FWCI: 0.401

Cites: 13

Cited by: 2

Related to: 10