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A. Scholze

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI
2014 · K. -I. Seo, B. Haran, et al. · Symposium on VLSI Technology · 103
Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face
1996 · A. Scholze, W. G. Schmidt, et al. · Physical review. B, Condensed matter · 68
Single-electron device simulation
2000 · A. Scholze, A. Schenk, et al. · IEEE Transactions on Electron Devices · 39
Analysis of Gate-Induced Drain Leakage Mechanisms in Silicon-Germanium Channel pFET
2014 · Vishal A. Tiwari, Daniel Jaeger, et al. · IEEE Transactions on Electron Devices · 23
Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface?
1996 · W.G. Schmidt, A. Scholze, et al. · Surface Science · 23
(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations
2014 · Darsen Lu, Pierre Morin, et al. · ECS Transactions · 18
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Analyzing the channel dopant profile in next-generation FinFETs via atom probe tomography
2017 · Andrew J. Martin, Yong Wei, et al. · Ultramicroscopy · 15
Full Quantum Simulation of Silicon-on-Insulator Single-Electron Devices
2002 · Frederik Ole Heinz, Andreas Schenk, et al. · Journal of Computational Electronics · 11
Adatoms and vacancies on the diamond(111) surface
1996 · F Bechstedt, W. G Schmidt, et al. · Europhysics Letters (EPL) · 11
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10nm FINFET technology for low power and high performance applications
2014 · D. Guo, H. Shang, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 10
Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure
1996 · A. Scholze, W.G. Schmidt, et al. · Materials Science and Engineering B · 10
Simulation of single-electron devices
2000 · Scholze, Andreas · 9
Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs
2024 · Hemant Dixit, Daniel J. Lichtenwalner, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 6
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Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC
2024 · Suman Das, Daniel J. Lichtenwalner, et al. · Journal of Electronic Materials · 6
Investigation of Fixed Oxide Charge and Fin Profile Effects on Bulk FinFET Device Characteristics
2013 · Bomsoo Kim, Dong-Il Bae, et al. · IEEE Electron Device Letters · 6
The influence of localized states on gate tunnel currents-modeling and simulation
2002 · A. Wettstein, A. Schenk, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 6
Diamond (111) and (100) surface reconstructions
1996 · A. Scholze, W.G. Schmidt, et al. · Thin Solid Films · 6
Modeling gate-pitch scaling impact on stress-induced mobility and external resistance for 20nm-node MOSFETs
2010 · Seong-Dong Kim, Sameer Jain, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 5
Effect of the tunneling rates on the conductance characteristics of single-electron transistors
2003 · A. Scholze, A. Schenk, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 4
Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations
2006 · Darsen D. Lu, P. Morin, et al. · Dialnet (Universidad de la Rioja) · 3
New implantation tables for B, BF2, P, As, In and Sb
2002 · C. Zechner, A. Erlebach, et al. · International Conference on Ion Implantation Technology · 3
Calibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiC
2024 · Andreas Scholze, Alexander V. Suvorov, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2
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Modeling of gate-induced drain leakage mechanisms in silicon-germanium channel pFET
2014 · Vishal A. Tiwari, Andreas Scholze, et al. · IEEE International Conference on Emerging Electronics (ICEE) · 2
Exploring MOL design options for a 20nm CMOS technology using TCAD
2011 · Andreas Scholze, Stephen Furkay, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 2
Analytic model for ion channeling in successive implantations in crystalline silicon
2005 · S. Strauss, C. Zechner, et al. · Materials Science and Engineering B · 2
Works count: 36
Citation count: 396
H-index: 10
I10-index: 11
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