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10nm FINFET technology for low power and high performance applications

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Year: 2014
Type: conference-paper
Source: IEEE International Conference on Solid-State and Integrated Circuit Technology
DOI: 10.1109/icsict.2014.7021207
Authors: D. Guo, H. Shang, K. Seo, B. Haran, T. Standaert, D. Gupta, E. Alptekin, D. Bae, G. Bae, D. Chanemougame, K. Cheng, J. Cho, B. Hamieh, J. Hong, T. Hook, J. Jung, R. Kambhampati, B. Kim, H. Kim, K. Kim, T. Kim, D. Liu, H. Mallela, P. Montanini, M. Mottura, S. Nam, I. Ok, Y. Park, A. Paul, C. Prindle, R. Ramachandran, V. Sardesai, A. Scholze, S. Seo, R. Southwick, J. Strane, X. Sun, G. Tsutsui, N. Tripathi, R. Vega, M. Weybright, R. Xie, C. Yeh, H. Bu, S. Burns, D. Canaperi, M. Celik, M. Colburn, H. Jagannathan, S. Kanakasabaphthy, W. Kleemeier, L. Liebmann, D. Mcherron, P. Oldiges, V. Paruchuri, T. Spooner, J. Stathis, R. Divakaruni, T. Gow, J. Iacoponi, J. Jenq, R Sampson, W. Yang, M. Khare
Institutions: IBM (United States), Samsung Electronics (South Korea), GlobalFoundries (United States)
Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
SDG: Industry, innovation and infrastructure

Open Access status: closed
OpenAlex ID: W2034412792
FWCI: 0.802
Cites:
Cited by: 10
Related to: 10
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