Work

The influence of localized states on gate tunnel currents-modeling and simulation

Year: 2002

Type: conference-paper

Source: International Conference on Simulation of Semiconductor Processes and Devices

DOI: 10.1109/sispad.1997.621346

Authors: A. Wettstein, A. Schenk, A. Scholze, W. Fichtner

Institutions: ETH Zurich, Integrated Systems Laboratory

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2157476016

FWCI: 0.376

Cites: 8

Cited by: 6

Related to: 10