Year: 2009
Type: conference-paper
Abstract: Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study
Source: AIP conference proceedings
DOI: 10.1063/1.3251214
Authors: C. M. Settens, V. K. Kamineni, G. A. Antonelli, A. Grill, A. C. Diebold, R. J. Matyi, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold
Institutions: State University of New York, University at Albany, State University of New York, Instituto Tecnológico de Tehuacán, Instituto Tecnológico Superior de Huauchinango, Instituto Tecnológico de Mazatlán, Instituto Tecnológico Superior de Teziutlán, IBM (United States), IBM Research - Thomas J. Watson Research Center
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1574736035