Work

Kinetics of Si1−xGex(001) growth on Si(001)2×1 by gas-source molecular-beam epitaxy from Si2H6 and Ge2H6

Year: 1998

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.368882

Authors: H. Kim, N. Taylor, T. R. Bramblett, J. E. Greene

Institution: University of Illinois Urbana-Champaign

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Energy, Office of Naval Research

OpenAlex ID: W1591701563

FWCI: 2.772

Cites: 44

Cited by: 34

Related to: 10