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N. Taylor

Observed name: N Taylor
ORCID: 0000-0002-8544-9071
Observed ORCID: 0000-0002-8544-9071
OpenAlex ID: A5113218224
Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1
1998 · O. Gurdal, P. Desjardins, et al. · Journal of Applied Physics · 134
Ge(001) gas-source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening
1995 · T. R. Bramblett, Q. Lu, et al. · Journal of Applied Physics · 54
Raman scattering from fully strained Ge1−xSnx (x⩽0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy
1998 · M. Rojas-López, H. Navarro-Contreras, et al. · Journal of Applied Physics · 46
Ultrahigh B doping (<~1022cm−3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport
2000 · G. Glass, H. Kim, et al. · Physical review. B, Condensed matter · 41
Effects of H coverage on Ge segregation during Si1−xGex gas-source molecular beam epitaxy
1997 · H. Kim, N. Taylor, et al. · Journal of Applied Physics · 35
Kinetics of Si1−xGex(001) growth on Si(001)2×1 by gas-source molecular-beam epitaxy from Si2H6 and Ge2H6
1998 · H. Kim, N. Taylor, et al. · Journal of Applied Physics · 34
Effects of B doping on hydrogen desorption from Si(001) during gas-source molecular-beam epitaxy from Si2H6 and B2H6
1996 · H. Kim, G. Glass, et al. · Applied Physics Letters · 34
Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics
1997 · H. Kim, G. Glass, et al. · Journal of Applied Physics · 27
Some fundamental problems in the measurement of sticking probabilities of gases on metal films
1967 · D O Hayward, N Taylor · Journal of Scientific Instruments · 25
Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption
1997 · H. Kim, N. Taylor, et al. · Surface Science · 19
Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge1−xSnx alloys on Ge(001)2×1
1999 · P. Desjardins, T. Spila, et al. · Physical review. B, Condensed matter · 16
Absorption and diffusion of hydrogen and deuterium in tantalum at low temperatures
1973 · J. M. Guil, D. O. Hayward, et al. · Proceedings of the Royal Society of London A Mathematical and Physical Sciences · 16
Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions
1999 · N. Taylor, H. Kim, et al. · Journal of Applied Physics · 11
Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001)
2002 · T. Spila, P. Desjardins, et al. · Journal of Applied Physics · 10
Si(011) 16×2 gas-source molecular beam epitaxy: Growth kinetics
2000 · N. Taylor, H. Kim, et al. · Applied Physics Letters · 9
Ge surface segregation during Si1−xGex(011) gas-source molecular beam epitaxy from Si2H6 and Ge2H6
2001 · N. Taylor, H. Kim, et al. · Surface Science · 3
B incorporation and hole transport in fully strained heteroepitaxial Si1 − xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6
1997 · Q. Lu, M.R. Sardela, et al. · Journal of Crystal Growth · 2
Works count: 17
Citation count: 516
H-index: 12
I10-index: 14
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