Work

Raman scattering from fully strained Ge1−xSnx (x⩽0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy

Year: 1998

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.368286

Authors: M. Rojas-López, H. Navarro-Contreras, P. Desjardins, O. Gurdal, N. Taylor, J. R. A. Carlsson, J. E. Greene

Institutions: Autonomous University of San Luis Potosí, University of Illinois Urbana-Champaign

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Consejo Nacional de Ciencia y Tecnología

OpenAlex ID: W1968666583

FWCI: 0.555

Cites: 22

Cited by: 46

Related to: 10