Work

Ultrahigh B doping (<~1022cm−3) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport

Year: 2000

Type: article

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.61.7628

Authors: G. Glass, H. Kim, P. Desjardins, N. Taylor, T. Spila, Q. Lu, J. E. Greene

Institution: University of Illinois Urbana-Champaign

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2062633705

FWCI: 2.332

Cites: 63

Cited by: 41

Related to: 10