Work

Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes

Year: 2000

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1305838

Authors: E. Monroy, F. Calle, J. L. Pau, F. J. Sánchez, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart

Institutions: Universidad Politécnica de Madrid, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1610035342

FWCI: 8.21

Cites: 46

Cited by: 104

Related to: 10