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Franck Omnès

Observed names: F Omnes, F Omnès, F Omnés, F. OMNES, F. Omnes, F. Omnès, F. Omnès, F. Omnés, Franck Omnes, OMNES F., Omnes, F, Omnes, F., Omnès, F., Omnès, Franck
Observed institutions: Centre National de la Recherche Scientifique, Max Planck Society, Université Joseph Fourier, Institut National des Sciences Appliquées de Toulouse, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Royal Observatory of Belgium, École Normale Supérieure - PSL, Laboratoire d'Intégration des Systèmes et des Technologies, Technicolor (France), Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Thales (France), Laboratoire de Cristallographie et Sciences des Matériaux, Institut Néel, Université de Valenciennes et du Hainaut-Cambrésis, University of Pretoria, Université Polytechnique Hauts-de-France, Universidad Politécnica de Madrid, Université Grenoble Alpes
OpenAlex ID: A5111659947
III nitrides and UV detection
2001 · E Muñoz, E Monroy, et al. · Journal of Physics Condensed Matter · 276
Metal-insulator transition and superconductivity in boron-doped diamond
2007 · T. Klein, P. Achatz, et al. · Physical Review B · 201
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AlGaN-based UV photodetectors
2001 · E. Monroy, F. Calle, et al. · Journal of Crystal Growth · 185
Hall hole mobility in boron-doped homoepitaxial diamond
2010 · J. Pernot, P. N. Volpe, et al. · Physical Review B · 180
Direct observation of the core structures of threading dislocations in GaN
1998 · Y. Xin, S. J. Pennycook, et al. · Applied Physics Letters · 174
High hole mobility in boron doped diamond for power device applications
2009 · Pierre-Nicolas Volpe, Julien Pernot, et al. · Applied Physics Letters · 162
Extreme dielectric strength in boron doped homoepitaxial diamond
2010 · Pierre-Nicolas Volpe, Pierre Muret, et al. · Applied Physics Letters · 158
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Conduction- and valence-band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
1990 · D. Biswas, N. Debbar, et al. · Applied Physics Letters · 144
AlGaN metal–semiconductor–metal photodiodes
1999 · E. Monroy, F. Calle, et al. · Applied Physics Letters · 137
Wide bandgap UV photodetectors: a short review of devices and applications
2007 · Franck Omnès, Eva Monroy, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 123
First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate
1988 · M. Razeghi, M. Defour, et al. · Applied Physics Letters · 119
Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes
2000 · E. Monroy, F. Calle, et al. · Journal of Applied Physics · 104
Comparison of the XPS spectra from homoepitaxial {111}, {100} and polycrystalline boron-doped diamond films
2010 · S. Ghodbane, D. Ballutaud, et al. · Diamond and Related Materials · 101
Impurity dimers in superconducting B-doped diamond: Experiment and first-principles calculations
2006 · E. Bourgeois, E. Bustarret, et al. · Physical Review B · 99
XPS study of ruthenium tris-bipyridine electrografted from diazonium salt derivative on microcrystalline boron doped diamond
2009 · Charles Agnès, Jean-Charles Arnault, et al. · Physical Chemistry Chemical Physics · 98
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
1999 · F. Omnès, N. Marenco, et al. · Journal of Applied Physics · 93
Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection
2002 · E. Monroy, T. Palacios, et al. · Applied Physics Letters · 91
Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures
1990 · Y.-J. Chan, D. Pavlidis, et al. · IEEE Transactions on Electron Devices · 91
Al x Ga 1−x N:Si Schottky barrier photodiodes with fast response and high detectivity
1998 · E. Monroy, F. Calle, et al. · Applied Physics Letters · 77
Etching mechanism of diamond by Ni nanoparticles for fabrication of nanopores
2013 · Hasan-al Mehedi, Jean-Charles Arnault, et al. · Carbon · 76
The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy
1998 · S. Haffouz, H. Lahrèche, et al. · Applied Physics Letters · 74
Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films
2000 · Y. Xin, E. M. James, et al. · Applied Physics Letters · 71
Nanoindentation on AlGaN thin films
1999 · D. Cáceres, I. Vergara, et al. · Journal of Applied Physics · 69
High breakdown voltage Schottky diodes synthesized on p‐type CVD diamond layer
2010 · Pierre‐Nicolas Volpe, Pierre Muret, et al. · physica status solidi (a) · 68
Highly sensitive thermal conductivity measurements of suspended membranes (SiN and diamond) using a 3ω-Völklein method
2012 · A. Sikora, H. Ftouni, et al. · Review of Scientific Instruments · 66
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Works count: 218
Citation count: 5,747
H-index: 43
I10-index: 116
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