Work

Extreme dielectric strength in boron doped homoepitaxial diamond

Year: 2010

Type: article

Abstract: The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below 1016 cm−3 in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed.

Source: Applied Physics Letters

DOI: 10.1063/1.3520140

Authors: Pierre-Nicolas Volpe, Pierre Muret, Julien Pernot, Franck Omnès, Tokuyuki Teraji, Yasuo Koide, François Jomard, Dominique Planson, Pierre Brosselard, Nicolas Dheilly, Bertrand Vergne, Sigo Scharnholz

Institutions: Centre National de la Recherche Scientifique, Université Joseph Fourier, Institut Néel, National Institute for Materials Science, Groupe d’Étude de la Matière Condensée, Lyon 1 Université, Institut Franco-Allemand de Recherches de Saint-Louis

Language: English

Topic: Diamond and Carbon-based Materials Research

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funder: Japan Society for the Promotion of Science

Award: Research on interface stabilization of diamond junction for developing practical device applications

OpenAlex ID: W1966987325

FWCI: 1.978

Cites: 25

Cited by: 158

Related to: 10