Work

A new 1T/2C merged two-terminal gain cell with SBT encapsulated floating gate MOSFET for highly scalable FeRAM

Year: 1999

Type: conference-paper

Source: Symposium on VLSI Technology

DOI: 10.1109/vlsit.1999.799385

Authors: M. Aoki, M. Mushiga, A. Itoh, T. Eshita, Y. Arimoto

Institution: Fujitsu (Japan)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1682455463

FWCI:

Cites: 2

Cited by: 1

Related to: 10