Author

M. Aoki

Observed name: Masaki Aoki Masaki Aoki

Observed institutions: Fujitsu (Japan), Hitachi (Japan)

OpenAlex ID: A5111533910

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

2008 · K. Kinoshita, K. Tsunoda, et al. · Applied Physics Letters · 276

Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

2006 · K. Kinoshita, T. Tamura, et al. · Applied Physics Letters · 216

Low Power and High Speed Switching of Ti-doped NiO ReRAM under the Unipolar Voltage Source of less than 3 V

2007 · K. Tsunoda, K. Kinoshita, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 166

Anti-phase direct bonding and its application to the fabrication of InP-based 1.55 μm wavelength lasers on GaAs substrates

1995 · Y. Okuno, K. Uomi, et al. · Applied Physics Letters · 31

Wide-temperature-range operation of 1.3-μm beam expander-integrated laser diodes grown by in-plane thickness control MOVPE using a silicon shadow mask

1996 · M. Aoki, M. Komori, et al. · IEEE Photonics Technology Letters · 29

Novel highly scalable multi-level cell for STT-MRAM with stacked perpendicular MTJs

2013 · M. Aoki, Hideyuki Noshiro, et al. · Symposium on VLSI Technology · 25

Bitline GND sensing technique for low-voltage operation FeRAM

2002 · S. Kawashima, T. Endo, et al. · IEEE Journal of Solid-State Circuits · 25

Reduction of Reset Current in NiO-ReRAM Brought about by Ideal Current Limiter

2007 · K. Kinoshita, K. Tsunoda, et al. · IEEE International Memory Workshop (IMW) · 21

Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model

2008 · K. Kinoshita, H. Noshiro, et al. · Journal of materials research/Pratt's guide to venture capital sources · 15

Area dependence of thermal stability factor in perpendicular STT-MRAM analyzed by bi-directional data flipping model

2014 · K. Tsunoda, M. Aoki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13

A novel voltage sensing 1T/2MJT cell with resistance ratio for highly stable and scalable MRAM

2005 · M. Aoki, H. Iwasa, et al. · Symposium on VLSI Circuits · 10

Distribution of Fe in an Intrinsic Gettered Silicon Wafer after Annealing at Supersaturation Temperature

1996 · Masaki Aoki Masaki Aoki, Akito Hara Akito Hara · Japanese Journal of Applied Physics · 10

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New Model Proposed for Switching Mechanism of ReRAM

2006 · K. Kinoshita, T. Tamura, et al. · IEEE International Memory Workshop (IMW) · 9

Highly manufacturable multi-level perpendicular MTJ with a single top-pinned layer and multiple barrier/free layers

2013 · K. Tsunoda, M. Aoki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8

A novel MTJ for STT-MRAM with a dummy free layer and dual tunnel junctions

2012 · K. Tsunoda, H. Noshiro, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7

Top-pinned perpendicular MTJ structure with a counter bias magnetic field layer for suppressing a stray-field in highly scalable STT-MRAM

2013 · Y. Iba, Chikako Yoshida, et al. · Symposium on VLSI Technology · 6

MgO Based Magnetic Tunnel Junctions With Co$_{20}$Fe$_{60}$B$_{20}$ Sensing Layer for Magnetic Field Sensors

2013 · T. Takenaga, C. Yoshida, et al. · IEEE Transactions on Magnetics · 5

Analytical models for transient diffusion and activation of ion-implanted boron during rapid thermal annealing considering ramp-up period

2002 · K. Suzuki, M. Aoki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 4

Demonstration of zero-offset-field operation for top-pinned MTJ with synthetic antiferromagnetic free layer

2013 · C. Yoshida, T. Takenaga, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3

Strain-engineering for high-performance STT-MRAM

2011 · Y. Iba, K. Tsunoda, et al. · Symposium on VLSI Technology · 3

A Novel MTJ Shape with Large Write Operation Margin for High Density MRAM

2007 · Y. Sato, S. Yagaki, et al. · International Conference on Solid State Devices and Materials (SSDM) · 2

Novel gain cell with ferroelectric coplanar capacitor for high-density nonvolatile random-access memory

2002 · M. Aoki, H. Takauchi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 2

Intrinsic Gettering of Iron in Czochralski Silicon Crystals

1992 · M. Aoki, A. Hara, et al. · MRS Proceedings · 2

Scalable sensing of interconnect current with magnetic tunnel junctions embedded in Cu interconnects

2013 · T. Takenaga, Y. Tsuzaki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 1

A new 1T/2C merged two-terminal gain cell with SBT encapsulated floating gate MOSFET for highly scalable FeRAM

1999 · M. Aoki, M. Mushiga, et al. · Symposium on VLSI Technology · 1

Works count: 28

Citation count: 891

H-index: 10

I10-index: 12