Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
Year: 2006
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.2339032
Authors: K. Kinoshita, T. Tamura, M. Aoki, Y. Sugiyama, H. Tanaka
Institution: Fujitsu (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2029998601