High Efficiency Copper Electroplated Heterojunction Solar Cells and Modules – The Path towards 25% Cell Efficiency
Year: 2013
Type: article
Abstract: In this work, we present the latest results from Kaneka on high efficiency heterojunction crystalline silicon (c-Si) solar cells with a copper metallization scheme. We report copper plated heterojunction c-Si solar cells on 6 inch c-Si Cz wafers with a world record conversion on efficiency and generated power. Efficiencies of 24.2% (aperture area) and powers of 5.64 W (total area measurement) at 1 sun STC measurement have been certified by an independent laboratory. Values of open circuit voltage above 745mV, values of short circuit current above 40 mA/cm2, and values of fill factor above 82% have been reached. Results of the impact of the silicon wafer thickness on the efficiency of heterojunction c-Si solar cells are presented. Damp heat and thermal cycling reliability data of the copper electroplated heterojunction show comparable performance with Ag printed heterojunction. Temperature coefficient of -0.23%/ºC has been achieved which will translate in a higher total power of these devices under outdoor operation. We present the path toward efficiencies above 25% for low concentrations which combined with the good temperature coefficient show the potential of heterojunction technology for LCPV applications in warm climates.
Source: EU PVSEC
Authors: Hernández, J.L., Adachi, D., Schroos, D., Valckx, N., Menou, N., Uto, T., Hino, M., Kanematsu, M., Kawasaki, H., Mishima, R., Nakano, K., Uzu, H., Terashita, T., Yoshikawa, K., Kuchiyama, T., Hiraishi, M., Nakanishi, N., Yoshimi, M., Yamamoto, K.
Institutions: Kaneka (United States), KU Leuven, Imec the Netherlands
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1920006481