Work

Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy

Year: 1997

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.36.3810

Authors: Reiko Kuroiwa Reiko Kuroiwa, Hajime Asahi Hajime Asahi, Kakuya Iwata Kakuya Iwata, Seong-Jin Kim Seong-Jin Kim, Joo-Hyong Noh Joo-Hyong Noh, Kumiko Asami Kumiko Asami, Shun-ichi Gonda Shun-ichi Gonda

Institution: The Institute of Scientific and Industrial Research, The University of Osaka

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1963808933

FWCI: 1.191

Cites: 6

Cited by: 15

Related to: 10