Author

Shun‐ichi Gonda

Observed names: Gonda, Shun-ichi, Shun'ichi Gonda, Shun-Ichi Gonda, Shun-ichi GONDA, Shun-ichi Gonda, Shun-ichi Gonda Shun-ichi Gonda

Institution: The Institute of Scientific and Industrial Research, The University of Osaka

Observed institutions: Fukui University of Technology, University of Tsukuba, Hamamatsu Photonics (Japan), Sanyo (Japan), University of Chicago, Ulvac (Japan), Foundation Wakasa Wan Energy Research Center, Hamamatsu Photonics (United Kingdom), Nissin Electric Co., Ltd. (Japan), The Institute of Scientific and Industrial Research, The University of Osaka, Osaka Institute of Technology, National Institute of Advanced Industrial Science and Technology, The University of Osaka

OpenAlex ID: A5111879046

Preparation and structure of carbon film deposited by a mass-separated C+ ion beam

1984 · Takeo Miyazawa, Shunji Misawa, et al. · Journal of Applied Physics · 162

Infrared study of amorphous B1−xCx films

1995 · Koun Shirai, Shuichi Emura, et al. · Journal of Applied Physics · 103

High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns

1996 · Kakuya Iwata, Hajime Asahi, et al. · Japanese Journal of Applied Physics · 102

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Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R- and M-Plane Sapphire and Silica Glass Substrates

1997 · Kakuya Iwata, Hajime Asahi Asami, et al. · Japanese Journal of Applied Physics · 77

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Internal-stress effects on Raman spectra of Inx Ga1−x As on InP

1988 · Shuichi Emura, Shun-ichi Gonda, et al. · Physical review. B, Condensed matter · 61

GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy

1998 · Kakuya Iwata, Hajime Asahi, et al. · Japanese Journal of Applied Physics · 56

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Doping and electrical properties of Mg in LPE AlxGa1−xAs

1979 · Seiji Mukai, Yunosuke Makita, et al. · Journal of Applied Physics · 44

Radiation hardness of single‐crystalline zinc oxide films

2012 · Kazuto Koike, Takahiro Aoki, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 43

Raman spectra of AlxIn1−xAs grown by molecular-beam epitaxy

1987 · Shuichi Emura, Tsuyoshi Nakagawa, et al. · Journal of Applied Physics · 43

Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices

1991 · Hajime Asahi, Kumiko Asami, et al. · Applied Physics Letters · 41

Characterization of hydrogenated amorphous boron films prepared by electron cyclotron resonance plasma chemical vapor deposition method

1990 · Koun Shirai, Shun-ichi Gonda · Journal of Applied Physics · 40

Study of Ga ion implantation damage and annealing effect in Sn-doped InP using Raman scattering

1989 · Soon Jae Yu, Hajime Asahi, et al. · Journal of Applied Physics · 40

Gas Source Molecular Beam Epitaxial Growth of GaN 1-xPx (x \Leq 0.015) Using Ion-Removed Electron Cyclotron Resonance Radical Cell

1996 · Kakuya Iwata, Hajime Asahi, et al. · Japanese Journal of Applied Physics · 39

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Molecular Beam Epitaxy of GaP and GaAs1-xPx

1976 · Yuichi Matsushima, Shun-ichi Gonda · Japanese Journal of Applied Physics · 38

Weak-Field Magnetoresistance of Impurity Conduction in n -Type Germanium

1962 · Nobuo Mikoshiba, Shun-ichi Gonda · Physical Review · 38

Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures

1991 · Soon Jae Yu, Hajime Asahi, et al. · Journal of Applied Physics · 37

Self-Organized Dot/Columnar Structures and Quasi-Perfect CuPt-Type Ordering in (GaP)n(InP)n Superlattices Grown on GaAs (N11) Substrates by Gas Source Molecular Beam Epitaxy

1996 · Seong-Jin Kim, Hajime Asahi, et al. · Japanese Journal of Applied Physics · 35

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XPS study on valence band structures of transition-metal trisulfides, TiS3, NbS3, and TaS3

1981 · Kazuhiro Endo, Hideo Ihara, et al. · Journal of Solid State Chemistry · 32

Electric Probe Measurements in an ECR Plasma CVD Apparatus

1989 · Kouun Shirai, Takashi Iizuka, et al. · Japanese Journal of Applied Physics · 31

Computer simulations of liquid phase epitaxy of III-V ternary alloys

1976 · Hachiro Ijuin, Shun-ichi Gonda · Journal of Crystal Growth · 29

XPS study of one-dimensional compounds: TiS3

1982 · Kazuhiro Endo, Hideo Ihara, et al. · Journal of Solid State Chemistry · 28

MOMBE (Metalorganic Molecular Beam Epitaxy) growth of InGaSb on GaSb

1989 · Tadaaki Kaneko, Hajime Asahi, et al. · Journal of Crystal Growth · 27

Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy

1978 · Shun-ichi Gonda, Yuichi Matsushima, et al. · Japanese Journal of Applied Physics · 27

Composition-ratio dependence of formation of bound states in nitrogen-implanted AlxGa1−xAs

1976 · Yunosuke Makita, Hachiro Ijuin, et al. · Applied Physics Letters · 27

Electroreflectance study of AlxGa1−x−yInyP alloy

1989 · Kumiko Asami, Hajime Asahi, et al. · Solid State Communications · 26

Works count: 133

Citation count: 1,956

H-index: 26

I10-index: 59