Year: 1998
Type: article
Abstract: A large variation in wavelength from the ultraviolet to longer than 2 µm could be achieved in the GaN-rich side of the GaN1-x As x alloy due to the large bowing of bandgap energy. Layers of GaN1-x As x are grown on (0001) sapphire substrates by electron cyclotron resonance molecular beam epitaxy (ECR-MBE) using an ion-removed ECR radical cell after the growth of GaN buffer layers. During the growth of GaN1-x As x layers, a streaky reflection high-energy electron diffraction (RHEED) pattern was observed. The excitonic photoluminescence (PL) peak from the GaN-rich side of the GaN1-x As x layer shows a large red shift as the As content changes. When an As content of up to x=0.009 is attained, a bandgap bowing parameter of 19.6 eV is experimentally obtained. Such a large value of the bowing parameter is promising for applications to optical devices operating over wide range of wavelength.
DOI: 10.1143/jjap.37.1436
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2014765823