High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
Year: 1996
Type: article
Abstract: GaN layers are grown on (0001) sapphire substrate by electron cyclotron resonance molecular beam epitaxy (ECR-MBE) using an ECR plasma cell with ion removal magnets on the cell top for the nitrogen source. The efficiency of the ion removal magnets in this ECR plasma cell is 99%. High-quality GaN layers are obtained. In particular, (2×2) and (4×4) RHEED (reflection high-energy electron diffraction) patterns are observed during GaN growth and during cooling after growth, respectively, indicating a flat and smooth surface of GaN. These results show the superiority of the ion-removed ECR plasma cell.
DOI: 10.1143/jjap.35.l289
Authors: Kakuya Iwata, Hajime Asahi, Soon Jae Yu, Kumiko Asami, Hideki Fujita, Masahiro Fushida Masahiro Fushida, Shun-ichi Gonda Shun-ichi Gonda
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2018373380