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Author

Soon Jae Yu

Observed names: S J Yu, S. J. Yu, S. Jae Yu, S.J. Yu, SOON JAE YU, Soon Jae Yu Soon Jae Yu, Soon-Jae Yu, Soon‐Jae Yu
Institution: Sun Moon University
ORCID: 0009-0004-4663-6087
Observed ORCID: 0009-0004-4663-6087
OpenAlex ID: A5113768605
High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2×2) and (4×4) Reflection High Energy Electron Diffraction Patterns
1996 · Kakuya Iwata, Hajime Asahi, et al. · Japanese Journal of Applied Physics · 102
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Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices
1991 · Hajime Asahi, Kumiko Asami, et al. · Applied Physics Letters · 41
Study of Ga ion implantation damage and annealing effect in Sn-doped InP using Raman scattering
1989 · Soon Jae Yu, Hajime Asahi, et al. · Journal of Applied Physics · 40
Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures
1991 · Soon Jae Yu, Hajime Asahi, et al. · Journal of Applied Physics · 37
Intermixing of InGaAs/InP multiple quantum well structures by Ga implantation
1989 · Hitoshi Sumida, Hajime Asahi, et al. · Applied Physics Letters · 26
Size effect of thermal radiation
2009 · Soon-Jae Yu, Suk Joo Youn, et al. · Physica B Condensed Matter · 24
Effect of Bi 2 O 3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Zn 2 SiO 4 Ceramics
2008 · Jin‐Seong Kim, Ngoc‐Huan Nguyen, et al. · International Journal of Applied Ceramic Technology · 21
Gas source MEE (migration enhanced epitaxy) growth of InP
1991 · Nobuyuki Takeyasu, Hajime Asahi, et al. · Journal of Crystal Growth · 21
Very low resistance ohmic contacts to n-GaN
1998 · Hwe Jae Lee, Soon Jae Yu, et al. · Journal of Electronic Materials · 18
Influence of hydrogen on the step flow growth of GaAs on vicinal surfaces by gas-source migration enhanced epitaxy
1992 · H. Asahi, T. Hisaka, et al. · Applied Physics Letters · 17
?Finite Size Effect of One-dimensional Thermal Radiation
2010 · Heetae Kim, Suk Joo Youn, et al. · Journal of the Korean Physical Society · 15
Development of a very small LED lamp with a low‐thermal‐resistance lead frame for an LCD backlight unit
2009 · Soon‐Jae Yu, Do‐Hyung Kim, et al. · Journal of Information Display · 11
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Surface-discharge characteristics of magnesium oxide thin films prepared by ion beam-assisted deposition
2002 · Zhi-Nong Yu, Jong-Wook Seo, et al. · Surface and Coatings Technology · 11
Vertical chip of GaN‐based light‐emitting diode formed on sapphire substrate
2005 · Seong‐Jin Kim, Yong‐Seok Choi, et al. · physica status solidi (a) · 9
Generalized Electron Emission Theory for One-Dimensional Conducting Materials
2024 · Heetae Kim, Chang-Soo Park, et al. · Applied Sciences · 8
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Laser Lift-Off of the Sapphire Substrate for Fabricating Through-AlN-Via Wafer Bonded Absorption Layer Removed Thin Film Ultraviolet Flip Chip LED
2021 · Anil Kawan, Soon Jae Yu · Transactions on Electrical and Electronic Materials · 8
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Study of Laser Lift-Off Process for Fabrication of GaN-Based 365-nm Ultraviolet Absorption Layer Removed Flip Chip LED
2018 · Anil Kawan, Soon-Jae Yu, et al. · Transactions on Electrical and Electronic Materials · 6
Numerical calculation study on the generalized electron emission phenomenon
2009 · Heetae Kim, Soon Jae Yu · Journal of Information Display · 6
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InGaAsP/InP quantum wires fabricated by focused Ga ion beam implantation
1992 · H. Asahi, S.J. Yu, et al. · Surface Science · 6
Super Thin 0.25 mm Thickness White LED Lamp with PCB Type Lead Frame
2010 · Soon Jae Yu, Do Hyung Kim · Journal of the Korean Institute of Electrical and Electronic Material Engineers · 5
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Formation of a High-Electrical-Resistance Region in InP by Ga Ion Implantation
1989 · Hajime Asahi, Hitoshi Sumida, et al. · Japanese Journal of Applied Physics · 5
Fabrication of geometric sapphire shaped InGaN/Al2O3 (S) LED scribed by using wet chemical etching
2014 · Anil Kawan, S. J. Yu, et al. · Journal of the Korean Physical Society · 3
Fabrication of a large LCD backlight unit with red, green, and blue LED lamps
2009 · Heetae Kim, Seung Jeong Noh, et al. · Journal of Information Display · 3
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Display and Optical Devices : Fabrication of Current Intensity Convertible CLD of Large Current Intensity for LED Network Application
2012 · Hwa Jin Park, S J Yu, et al. · Journal of the Korean Institute of Electrical and Electronic Material Engineers · 2
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Ionization of helium gas with a tungsten tip
2009 · Heetae Kim, Soon‐Jae Yu · Journal of Information Display · 2
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Works count: 45
Citation count: 455
H-index: 11
I10-index: 13
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