Work

Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire

Year: 2010

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.3373834

Authors: V. N. Jmerik, A. M. Mizerov, A. A. Sitnikova, P. S. Kop’ev, S. V. Ivanov, E. V. Lutsenko, N. P. Tarasuk, N. V. Rzheutskii, G. P. Yablonskii

Institutions: Ioffe Institute, B.I. Stepanov Institute of Physics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1963808971

FWCI: 2.854

Cites: 18

Cited by: 58

Related to: 10