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Eugenii V. Lutsenko
Observed names:
E V Lutsenko,
E. Lutsenko,
E. V. LUTSENKO,
E. V. Lutsenko,
E.V Lutsenko,
E.V. LUTSENKO,
E.V. Lutsenko,
Eugenii Lutsenko
show all 8
Institutions:
National Academy of Sciences of Belarus,
B.I. Stepanov Institute of Physics
Observed institutions:
National Academy of Sciences of Belarus,
Azerbaijan State University of Economics,
B.I. Stepanov Institute of Physics,
Institute of Physics,
O.Ya. Usikov Institute for Radiophysics and Electronics,
Ioffe Institute
show all 6
ORCID:
0000-0003-2333-7776
Observed ORCID:
0000-0003-2333-7776
OpenAlex ID:
A5111879047
Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire
2010
·
V. N. Jmerik
, A. M. Mizerov
, et al.
·
Applied Physics Letters
·
58
Plasma‐assisted molecular beam epitaxy of AlGaN heterostructures for deep‐ultraviolet optically pumped lasers
2013
·
V. N. Jmerik
, E. V. Lutsenko
, et al.
·
physica status solidi (a)
·
55
PDF
Plasma-assisted molecular beam epitaxy of Al(Ga)N layers and quantum well structures for optically pumped mid-UV lasers on c-Al2O3
2014
·
S V Ivanov
, D V Nechaev
, et al.
·
Semiconductor Science and Technology
·
46
PDF
AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique
2008
·
V.N. Jmerik
, T.V. Shubina
, et al.
·
Journal of Crystal Growth
·
43
Photoluminescence of CaxBa1−xGa2S4:Eu2+ solid solutions in wide excitation intensity and temperature intervals
2016
·
M.S. Leanenia
, E.V. Lutsenko
, et al.
·
Journal of Luminescence
·
36
High photoluminescence stability of CaGa 4 O 7 :Eu 3+ red phosphor in wide excitation intensity interval
2016
·
M.S. Leanenia
, E.V. Lutsenko
, et al.
·
Optical Materials
·
35
Photoluminescence study of Pr3+ doped CaGa2S4 in wide excitation intensity and temperature range
2021
·
M. S. Leanenia
, E. V. Lutsenko
, et al.
·
Journal of Applied Physics
·
29
Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures
2002
·
G.P. Yablonskii
, E.V. Lutsenko
, et al.
·
physica status solidi (a)
·
29
Photoluminescence of Ca x Ba1–x Ga2S4 Solid Solutions Activated by Eu2+ Ions
2015
·
M. S. Leanenia
, E. V. Lutsenko
, et al.
·
Journal of Applied Spectroscopy
·
27
Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux- and temperature-modulated techniques
2015
·
Valentin N. Jmerik
, Dmitrii V. Nechaev
, et al.
·
Journal of materials research/Pratt's guide to venture capital sources
·
23
Luminescence and Lasing in ZnSe Micropowders at High Optical Excitation Levels
2015
·
M. S. Leanenya
, E. V. Lutsenko
, et al.
·
Journal of Applied Spectroscopy
·
23
Recombination dynamics and lasing in ZnO∕ZnMgO single quantum well structures
2007
·
T. V. Shubina
, A. A. Toropov
, et al.
·
Applied Physics Letters
·
18
Growth, Stimulated Emission, Photo‐ and Electroluminescence of InGaN/GaN EL‐Test Heterostructures
2002
·
E.V. Lutsenko
, V.N. Pavlovskii
, et al.
·
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
·
18
PDF
Rearrangement of optical centers and stimulated radiation of Eu3+ in polycrystalline huntite under optical and electron-beam excitation
2010
·
G. E. Malashkevich
, V. N. Sigaev
, et al.
·
Journal of Experimental and Theoretical Physics Letters
·
16
AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy
2008
·
V. N. Jmerik
, A. M. Mizerov
, et al.
·
Semiconductors
·
16
Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping
2015
·
S. V. Sorokin
, S. V. Gronin
, et al.
·
Semiconductors
·
15
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates
2010
·
C. Mauder
, B. Reuters
, et al.
·
Journal of Crystal Growth
·
15
Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN
2002
·
M. Germain
, E. Kartheuser
, et al.
·
Journal of Applied Physics
·
15
Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm
2001
·
G. P. Yablonskii
, E. V. Lutsenko
, et al.
·
Applied Physics Letters
·
15
Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow—green spectral region
2013
·
E V Lutsenko
, A G Voinilovich
, et al.
·
Quantum Electronics
·
14
PDF
Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates
2004
·
G.P. Yablonskii
, A.L. Gurskii
, et al.
·
Journal of Crystal Growth
·
12
Lasing in Cd(Zn)Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers
2004
·
I. V. Sedova
, S. V. Sorokin
, et al.
·
Semiconductors
·
12
Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy
1998
·
G. P. Yablonskii
, A. L. Gurskii
, et al.
·
Journal of Electronic Materials
·
12
Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates
2013
·
E. V. Lutsenko
, N. V. Rzheutskii
, et al.
·
Physics of the Solid State
·
11
Low-threshold green laser heterostructures with Zn(Mg)SSe/ZnSe graded-index superlattice waveguide: Structural and optical properties
2011
·
I. V. Sedova
, E. V. Lutsenko
, et al.
·
Applied Physics Letters
·
11
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Works count:
121
Citation count:
844
H-index:
15
I10-index:
29
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