Work

Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures

Year: 2002

Type: article

Source: physica status solidi (a)

DOI: 10.1002/1521-396x(200207)192:1<54::aid-pssa54>3.0.co;2-2

Authors: G.P. Yablonskii, E.V. Lutsenko, V.N. Pavlovskii, V.Z. Zubialevich, A.L. Gurskii, H. Kalisch, A. Szymakowskii, R.A. Jansen, A. Alam, Y. Dikme, B. Schineller, M. Heuken

Institutions: National Academy of Sciences of Belarus, RWTH Aachen University, Aixtron (Germany)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: International Science and Technology Center

OpenAlex ID: W2004108692

FWCI: 2.332

Cites: 17

Cited by: 29

Related to: 10