Author

B. Schineller

Observed names: B Schineller, B. SCHINELLER, Bernd Schineller, Schineller, B., Schineller, Bernd, Б. Шинеллер

Observed institutions: Aixtron (Germany), RWTH Aachen University

ORCID: 0000-0003-4105-3080

Observed ORCID: 0000-0003-4105-3080

OpenAlex ID: A5019137293

Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

1998 · L. Eckey, U. von Gfug, et al. · Journal of Applied Physics · 100

Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor

2006 · C. Hemmingsson, P.P. Paskov, et al. · Journal of Crystal Growth · 41

Compensation effects in Mg-doped GaN epilayers

1998 · L Eckey, U Von Gfug, et al. · Journal of Crystal Growth · 40

Comparison of hydrogen and nitrogen as carrier gas for MOVPE growth of GaN

1998 · O Schön, B Schineller, et al. · Journal of Crystal Growth · 38

GaN boules grown by high rate HVPE

2011 · E. Richter, M. Gründer, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 35

Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes

2001 · N. D. Nguyen, M. Germain, et al. · Journal of Applied Physics · 34

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Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor

2006 · C. Hemmingsson, P.P. Paskov, et al. · Superlattices and Microstructures · 30

Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures

2002 · G.P. Yablonskii, E.V. Lutsenko, et al. · physica status solidi (a) · 29

MOVPE growth of InPSb/InAs heterostructures for mid-infrared emitters

1997 · M. Heuken, C. V. Eichel-Streiber, et al. · Journal of Electronic Materials · 20

Photoluminescence of GaN:Mg grown by metalorganic vapor-phase epitaxy (MOVPE)

1999 · P.H Lim, B Schineller, et al. · Journal of Crystal Growth · 19

Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions

2004 · V. A. Guzenko, N. Thillosen, et al. · Journal of Applied Physics · 18

Growth, Stimulated Emission, Photo‐ and Electroluminescence of InGaN/GaN EL‐Test Heterostructures

2002 · E.V. Lutsenko, V.N. Pavlovskii, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 18

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Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN

2002 · M. Germain, E. Kartheuser, et al. · Journal of Applied Physics · 15

Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm

2001 · G. P. Yablonskii, E. V. Lutsenko, et al. · Applied Physics Letters · 15

The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN:Mg grown by MOVPE

1998 · B Schineller, A Guttzeit, et al. · Journal of Crystal Growth · 15

Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor

2007 · C. Hemmingsson, G. Pozina, et al. · Journal of Crystal Growth · 13

(Invited) Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications

2010 · Ngoc Duy Nguyen, Gang Wang, et al. · ECS Transactions · 12

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