Work

Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions

Year: 2004

Type: article

Abstract: We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N2 atmosphere at a constant temperature in the range between 700 and 1050°C. Measurements of the magnetization as a function of magnetic field as well as of the temperature show typical paramagnetic behavior. In addition, a weak antiferromagnetic coupling between the implanted ions was observed. 3d-metal rich precipitates of crystalline nature are revealed by high resolution transmission electron microscopy.

Source: Journal of Applied Physics

DOI: 10.1063/1.1805718

Authors: V. A. Guzenko, N. Thillosen, A. Dahmen, R. Calarco, Th. Schäpers, L. Houben, M. Luysberg, B. Schineller, M. Heuken, A. Kaluza

Institutions: Forschungszentrum Jülich, Aixtron (Germany)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2007228494

FWCI: 0.823

Cites: 20

Cited by: 18

Related to: 10