Work

Luminescence and lasing in InGaN∕GaN multiple quantum well heterostructures grown at different temperatures

Year: 2004

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.1830076

Authors: G. P. Yablonskii, V. N. Pavlovskii, E. V. Lutsenko, V. Z. Zubialevich, A. L. Gurskii, H. Kalisch, A. Szymakowski, R. H. Jansen, A. Alam, B. Schineller, M. Heuken

Institutions: National Academy of Sciences of Belarus, RWTH Aachen University, Aixtron (Germany)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1994878052

FWCI:

Cites: 15

Cited by: 11

Related to: 10