Work

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

Year: 2012

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2012.2202319

Authors: Federico Nardi, Stefano Larentis, Simone Balatti, David C. Gilmer, Daniele Ielmini

Institutions: Politecnico di Milano, The University of Texas at Austin

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1964092902

FWCI: 11.2

Cites: 34

Cited by: 217

Related to: 10