Author

David C. Gilmer

Observed names: D C Gilmer, D. C. Gilmer, D. Gilmer, D.C. Gilmer, D. C. Gilmer, David C Gilmer, David Gilmer

Observed institutions: University of Minnesota, Motorola (United States), University of Helsinki, University of Liverpool, Peking University, Empire State Development, New York State Library, Yale University, University of Minnesota, Duluth, Semtech (United States), IBM Research - Austin, Freescale Semiconductor (Germany), Texas Instruments (United States), The University of Texas at Austin

ORCID: 0000-0001-6148-8079

Observed ORCID: 0000-0001-6148-8079

OpenAlex ID: A5082196352

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

2012 · Stefano Larentis, Federico Nardi, et al. · IEEE Transactions on Electron Devices · 503

Metal oxide resistive memory switching mechanism based on conductive filament properties

2011 · G. Bersuker, D. C. Gilmer, et al. · Journal of Applied Physics · 501

MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics

1997 · S.A. Campbell, D.C. Gilmer, et al. · IEEE Transactions on Electron Devices · 400

Titanium dioxide (TiO2)-based gate insulators

1999 · S. A. Campbell, H.-S. Kim, et al. · IBM Journal of Research and Development · 247

Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

2004 · C.C. Hobbs, L.R.C. Fonseca, et al. · IEEE Transactions on Electron Devices · 231

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study

2012 · Federico Nardi, Stefano Larentis, et al. · IEEE Transactions on Electron Devices · 217

High Dielectric Constant Materials

2005 · Howard R. Huff, D. C. Gilmer · Springer series in advanced microelectronics · 215

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

2012 · M. Lanza, K. Zhang, et al. · Applied Physics Letters · 210

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Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

2004 · C.C. Hobbs, L.R.C. Fonseca, et al. · IEEE Transactions on Electron Devices · 181

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

2013 · S. Balatti, S. Larentis, et al. · Advanced Materials · 180

Does Chemistry Really Matter in the Chemical Vapor Deposition of Titanium Dioxide? Precursor and Kinetic Effects on the Microstructure of Polycrystalline Films

1999 · Charles J. Taylor, David C. Gilmer, et al. · Journal of the American Chemical Society · 152

Analytical Modeling of Oxide-Based Bipolar Resistive Memories and Complementary Resistive Switches

2014 · Stefano Ambrogio, Simone Balatti, et al. · IEEE Transactions on Electron Devices · 146

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Metal oxide RRAM switching mechanism based on conductive filament microscopic properties

2010 · G. Bersuker, D. C. Gilmer, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 132

Leakage current and electrical breakdown in metal-organic chemical vapor deposited TiO2 dielectrics on silicon substrates

1996 · Hyeon-Seag Kim, D. C. Gilmer, et al. · Applied Physics Letters · 127

Fermi level pinning at the polySi/metal oxide interface

2004 · C. Hobbs, L. Fonseca, et al. · Symposium on VLSI Technology · 119

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

2012 · Federico Nardi, Simone Balatti, et al. · IEEE Transactions on Electron Devices · 117

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

2002 · J. K. Schaeffer, S. B. Samavedam, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 100

Random telegraph noise (RTN) in scaled RRAM devices

2013 · D. Veksler, G. Bersuker, et al. · IEEE International Reliability Physics Symposium proceedings · 98

Structural and electrical characterization of TiO2 grown from titanium tetrakis-isopropoxide (TTIP) and TTIP/H2O ambients

1996 · J. Yan, D. C. Gilmer, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 97

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

2013 · S. Privitera, G. Bersuker, et al. · Microelectronic Engineering · 92

Anhydrous Metal Nitrates as Volatile Single Source Precursors for the CVD of Metal Oxide Films

1998 · Daniel G. Colombo, David C. Gilmer, et al. · Chemical Vapor Deposition · 89

Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM

2013 · Simone Balatti, Stefano Ambrogio, et al. · IEEE Electron Device Letters · 81

Effects of RRAM Stack Configuration on Forming Voltage and Current Overshoot

2011 · D. C. Gilmer, G. Bersuker, et al. · IEEE International Memory Workshop (IMW) · 81

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

2002 · D. C. Gilmer, R. Hegde, et al. · Applied Physics Letters · 80

Low Temperature CVD of Crystalline Titanium Dioxide Films Using Tetranitratotitanium( IV

1998 · David C. Gilmer, Daniel G. Colombo, et al. · Chemical Vapor Deposition · 80

Works count: 145

Citation count: 6,271

H-index: 38

I10-index: 80