Work

Photoluminescence properties of localized states caused by nitrogen alloying in a GaInNAs/GaAs single quantum well

Year: 2004

Type: article

Source: Journal of Luminescence

DOI: 10.1016/j.jlumin.2004.09.014

Authors: K. Nomura, T. Yamada, Y. Iguchi, S. Takagishi, M. Nakayama

Institutions: Osaka City University, Sumitomo Electric Industries (Japan)

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1964658187

FWCI: 0.924

Cites: 13

Cited by: 9

Related to: 10