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Yasuhiro Iguchi

Observed names: Y. Iguchi, Yasuhiro Iguchi Yasuhiro Iguchi
ORCID: 0009-0009-7303-1653
Observed ORCID: 0009-0009-7303-1653
OpenAlex ID: A5111684858
MOVPE grown InGaAs/GaAsSb type II quantum well photodiode for SWIR focal plane array
2011 · H. Inada, H. Mori, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 25
The growth of high quality GaAsSb and type-II InGaAs/GaAsSb superlattice structure
2013 · K. Miura, Y. Iguchi, et al. · Journal of Applied Physics · 21
Low power‐consumption mid‐infrared distributed feedback quantum cascade laser for gas‐sensing application
2017 · J. Hashimoto, H. Yoshinaga, et al. · Electronics Letters · 15
1.3 µm Traveling-Wave GaInNAs Semiconductor Optical Amplifier
2004 · Jun-ichi Hashimoto, Kenji Koyama, et al. · Japanese Journal of Applied Physics · 14
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Optical characterization of InGaAsN layers grown on InP substrates
2008 · M. Yoshikawa, K. Miura, et al. · Journal of Crystal Growth · 13
Low dark current SWIR photodiode with InGaAs/GaAsSb Type II quantum wells grown on InP substrate
2009 · H. Inada, K. Miura, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 12
Development of Type-II superlattice VLWIR detectors in JAXA
2017 · Michito Sakai, Jumpei Murooka, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 10
Measurement of absorption and external quantum efficiency of an InAs/GaSb Type II superlattice
2014 · Haruyoshi Katayama, Tomoko Takekawa, et al. · Infrared Physics & Technology · 10
Growth and characterization of strain-compensated InGaAs/GaAsSb type II multiple quantum wells on InP substrate
2009 · Y. Yonezawa, R. Hiraike, et al. · Physica E Low-dimensional Systems and Nanostructures · 9
Photoluminescence properties of localized states caused by nitrogen alloying in a GaInNAs/GaAs single quantum well
2004 · K. Nomura, T. Yamada, et al. · Journal of Luminescence · 9
Near-noble transition-metal-based ohmic contacts to p-InP: Comparison of Ni and Pd as a base metal
1999 · Akira Yamaguchi, Hirokuni Asamizu, et al. · Journal of Applied Physics · 9
Mid-wavelength infrared focal plane array based on type II InAs/GaSb superlattices on InP substrate
2024 · Masaki Sato, Hiroshi Inada, et al. · Infrared Physics & Technology · 8
Pretreatment for surface leakage current reduction in type-II superlattice MWIR photodetectors
2014 · H. Inada, K. Machinaga, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 8
Improvement of crystal quality of thick InGaAsN layers grown on InP substrates by adding antimony
2007 · K. Miura, Y. Nagai, et al. · Journal of Crystal Growth · 8
Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region
1998 · Touko Sugiura, Nobuyasu Hase, et al. · Japanese Journal of Applied Physics · 8
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A coaxial-type 1.3/1.55 μm WDM-PD module for optical access networks
1996 · Y. Kuhara, Y. Fujimura, et al. · Journal of Lightwave Technology · 8
High performance type II superlattice focal plane array with 6μm cutoff wavelength
2016 · Kouhei Miura, Ken-ichi Machinaga, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 7
Development status of Type II superlattice infrared detector in JAXA
2013 · Haruyoshi Katayama, Junpei Murooka, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 7
5×5 cm2 GaAs and GaInAs Solar Cells with High Conversion Efficiency
2005 · Takashi Yamada, Akihiro Moto, et al. · Japanese Journal of Applied Physics · 7
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The effect of a thin antimony layer addition on PdZn ohmic contacts for p-type InP
2000 · Hirokuni Asamizu, Akira Yamaguchi, et al. · Applied Surface Science · 7
Optical WDM transceiver module using wavelength-selective coupler and WDM-PD for optical access networks
1997 · Y. Kuhara, Y. Fujimura, et al. · Journal of Lightwave Technology · 7
Recent development of SWIR focal plane array with InGaAs/GaAsSb type-II quantum wells
2016 · Hiroshi Inada, Kenichi Machinaga, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6
Type-II InAs/GaSb superlattice grown on InP substrate
2013 · K. Miura, Y. Iguchi, et al. · Journal of Crystal Growth · 6
Formation Mechanism of Low Contact Resistance PdZn-based Ohmic Contacts for p-type InP
2002 · Hirokuni Asamizu, Akira Yamaguchi, et al. · MATERIALS TRANSACTIONS · 6
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Effect of the first antimony layer on AuZn ohmic contacts to p-type InP
2000 · Akira Yamaguchi, Hirokuni Asamizu, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 6
Works count: 83
Citation count: 330
H-index: 9
I10-index: 8
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