Work

Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region

Year: 1998

Type: article

Abstract: We have studied the asymmetric broadening of the Raman spectra of In x Ga1-x As y P1-y grown on InP in the immiscible region using the spatial correlation model. The compositional dependence of Raman peaks are well explained by a simple model which does not account for the immiscibility. However, the broadening of the Raman line shape is greatly enhanced in the samples in the region of the immiscibility. In particular, the asymmetry of the spectral peak of the InAs-like longitudinal optical phonon is found to be enhanced in the immiscible region. This shows that the samples which include the immiscibility have been structurally changed to suppress the uniform distribution of the long wavelength phonons.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.37.544

Authors: Touko Sugiura, Nobuyasu Hase, Yasuhiro Iguchi, Nobuhiko Sawaki

Institutions: National Institute of Technology, Toyota College, Sumitomo Electric Industries (Japan), Nagoya University

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W1968100810

FWCI: 0.912

Cites: 36

Cited by: 8

Related to: 10