Work

Gas source Si-MBE

Year: 1990

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/0022-0248(90)90337-k

Authors: Hiroyuki Hirayama, Masayuki Hiroi, Kazuhisa Koyama, Toru Tatsumi

Institution: NEC (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1965950770

FWCI: 10.29

Cites: 22

Cited by: 34

Related to: 10