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Toru Tatsumi

Observed names: Toru TATSUMI, 辰巳, 徹
Institution: NEC (Japan)
OpenAlex ID: A5110181401
Ge growth on Si using atomic hydrogen as a surfactant
1994 · Akira Sakai, Toru Tatsumi · Applied Physics Letters · 235
Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
1995 · Kazuhiko Endo, Toru Tatsumi · Journal of Applied Physics · 163
Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy
1988 · Toru Tatsumi, Hiroyuki Hirayama, et al. · Applied Physics Letters · 148
Plasma deposition of low-dielectric-constant fluorinated amorphous carbon
1999 · Kazuhiko Endo, Keisuke Shinoda, et al. · Journal of Applied Physics · 136
Near-band-gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxy
1990 · Koichi Terashima, Michio Tajima, et al. · Applied Physics Letters · 121
Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics
1996 · Kazuhiko Endo, Toru Tatsumi · Applied Physics Letters · 97
Selective growth condition in disilane gas source silicon molecular beam epitaxy
1988 · Hiroyuki Hirayama, Toru Tatsumi, et al. · Applied Physics Letters · 90
Gas source silicon molecular beam epitaxy using silane
1987 · Hiroyuki Hirayama, Toru Tatsumi, et al. · Applied Physics Letters · 83
Gas source silicon molecular beam epitaxy using disilane
1988 · Hiroyuki Hirayama, Toru Tatsumi, et al. · Applied Physics Letters · 80
Reflection high energy electron diffraction and Auger electron spectroscopic study on B/Si(111) surfaces
1988 · Hiroyuki Hirayama, Toru Tatsumi, et al. · Surface Science · 80
Boron heavy doping for Si molecular beam epitaxy using a HBO2 source
1987 · Toru Tatsumi, Hiroyuki Hirayama, et al. · Applied Physics Letters · 66
Growth of strain-relaxed Ge films on Si(001) surfaces
1997 · Akira Sakai, Toru Tatsumi, et al. · Applied Physics Letters · 65
Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon Films
1985 · Toru Tatsumi, Naoaki Aizaki, et al. · Japanese Journal of Applied Physics · 64
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Defect-mediated island formation in Stranski-Krastanov growth of Ge on Si(001)
1993 · Akira Sakai, Toru Tatsumi · Physical Review Letters · 48
Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2
1992 · Toru Tatsumi, Ken-ichi Aketagawa, et al. · Journal of Crystal Growth · 48
Facet formation mechanism of silicon selective epitaxial layer by Si ultrahigh vacuum chemical vapor deposition
1994 · Tohru Aoyama, Taeko Ikarashi, et al. · Journal of Crystal Growth · 47
Hydrogen passivation effect in Si molecular beam epitaxy
1989 · Hiroyuki Hirayama, Toru Tatsumi · Applied Physics Letters · 43
Selective heteroepitaxial growth of Si1−xGex using gas source molecular beam epitaxy
1990 · Hiroyuki Hirayama, Masayuki Hiroi, et al. · Applied Physics Letters · 40
In situ RHEED observation of selective diminution at Si(001)-2 × 1 superlattice spots during MBE
1986 · Naoaki Aizaki, Toru Tatsumi · Surface Science · 40
Crystallization of Amorphous Silicon with Clean Surfaces
1991 · Akira Sakai, Haruhiko Ono, et al. · Japanese Journal of Applied Physics · 38
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High-quality HfSixOy gate dielectrics fabricated by solid phase interface reaction between physical-vapor-deposited metal–Hf and SiO2 underlayer
2004 · Heiji Watanabe, Motofumi Saitoh, et al. · Applied Physics Letters · 37
Amorphous carbon thin films containing benzene rings for use as low-dielectric-constant interlayer dielectrics
1997 · Kazuhiko Endo, Toru Tatsumi · Applied Physics Letters · 37
Gas source Si-MBE
1990 · Hiroyuki Hirayama, Masayuki Hiroi, et al. · Journal of Crystal Growth · 34
High doping of phosphorus in Si using gas source molecular beam epitaxy
1989 · Hiroyuki Hirayama, Toru Tatsumi · Applied Physics Letters · 33
Application of Fluorinated Amorphous Carbon Thin Films for Low Dielectric Constant Interlayer Dielectrics
1998 · Kazuhiko Endo, Toru Tatsumi, et al. · Japanese Journal of Applied Physics · 32
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Works count: 136
Citation count: 2,754
H-index: 28
I10-index: 61
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