Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF2+-implanted polycrystalline silicon gate
Year: 1997
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.119304
Authors: T. S. Chao, C. H. Chu
Institution: Institute of Electrophysics
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1967488688