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C. H. Chu

Observed names: C.H. Chu, Chih-Hsun Chu
OpenAlex ID: A5003753441
Mechanism of nitrogen coimplant for suppressing boron penetration in p+-polycrystalline silicon gate of p metal–oxide semiconductor field effect transistor
1996 · T. S. Chao, M. C. Liaw, et al. · Applied Physics Letters · 25
Silicon Photonics Platform for Next Generation Data Communication Technologies
2024 · S.K. Yeh, C.T. Shih, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 18
Suppression of Boron Penetration in P+-Poly-Si Gate Metal-Oxide-Semiconductor Transistor Using Nitrogen Implantation
1997 · T. S. Chao, C. H. Chien, et al. · Japanese Journal of Applied Physics · 11
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The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source
1996 · C.T. Huang, T.F. Lei, et al. · IEEE Electron Device Letters · 8
Interfacial reactions of titanium thin films on ion implanted (001) Si
1993 · H.R. Liauh, M.C. Chen, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 6
Formation of excellent shallow n+ junctions by As+ implantation into thin CoSi films on Si substrate
1993 · C.T. Lin, M.H. Juang, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 5
Inductive-coupling-nitrogen-plasma process for suppression of boron penetration in BF2+-implanted polycrystalline silicon gate
1997 · T. S. Chao, C. H. Chu · Applied Physics Letters · 4
Suppression of Boron Penetration in BF2 +-Implanted Poly-Si Gate
1996 · Tien Sheng Chao, Chih-Hsun Chu, et al. · Japanese Journal of Applied Physics · 4
Suppression of boron penetration in BF/sup 2/+ -implanted poly-Si gate using N/sub 2/O oxide and stacked amorphous-silicon (SAS) structure
2005 · T.S. Chao, C.H. Chu, et al. · International Electron Devices and Materials Symposium
Suppression of boron penetration in BF/sub 2/+-implanted poly-Si gate using N/sub 2/O oxide and stacked amorphous-silicon (SAS) structure
2005 · T.S. Chao, C.H. Chu, et al. · International Electron Devices and Materials Symposium
Flash EEPROM Tunneling Oxide Reliability Characterization under the test of FN Constant Current Stress and Program/Erase Cycling by using ISSG Nitrided Oxide
2004 · Chao-Wei Kuo, Cheng-Tung Huang, et al. · International Conference on Solid State Devices and Materials (SSDM)
Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P+-Poly-Si Gate of PMOSFETundefineds
1996 · T. S. Chao, C. H. Chien, et al. · International Conference on Solid State Devices and Materials (SSDM)
e-Implantation on t racteristics of the Ultra-Shallow y Using ilicide as a
1996 · Ching-Ting Huang, Tan Fu Lei, et al.
Works count: 13
Citation count: 81
H-index: 5
I10-index: 3
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