Work

Mechanism and Optimization of Nitrogen Co-Implant for Suppressing Boron Penetration in P+-Poly-Si Gate of PMOSFETundefineds

Year: 1996

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.1996.pd-1-3

Authors: T. S. Chao, C. H. Chien, C. P. Hao, M. C. Liaw, C. H. Chu, C. Y. Chang, T. F. Lei

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W631687564

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