15 kV IGBTs in 4H-SiC
Year: 2013
Type: article
Abstract: The latest developments in ultra high voltage 4H-SiC IGBTs are presented. A 4H-SiC P-IGBT, with a chip size of 8.4 mm x 8.4 mm and an active area of 0.32 cm2, which is double the active area of the previously reported devices [1], exhibited a blocking voltage of 15 kV, while showing a room temperature differential specific on-resistance of 41 mΩ-cm2 with a gate bias of -20 V. A 4H-SiC N-IGBT with the same area showed a blocking voltage of 17 kV, and demonstrated a room temperature differential specific on-resistance of 25.6 mΩ-cm2 with a gate bias of 20 V. Field-Stop buffer layer design was used to control the charge injection from the backside. A comparison between N- and P- IGBTs, and the effects of different buffer designs, are presented.
Source: Materials science forum
Authors: Sei Hyung Ryu, Craig Capell, Charlotte Jonas, Michael J. O'Loughlin, Lin Cheng, Khiem Lam, Albert A. Burk, Jim Richmond, Jack Clayton, Allen Hefner, David Grider, Anant Agarwal, John W. Palmour
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W1968205285