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Charlotte Jonas

Observed names: C Jonas, C. Jonas, Charlotte Elizabeth Jonas
OpenAlex ID: A5110072610
22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation
2014 · E. V. Brunt, S. T. Allen, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 84
Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs
2012 · Sei-Hyung Ryu, Craig Capell, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 80
A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching
2008 · Mrinal K. Das, Q. Jon Zhang, et al. · Materials science forum · 61
Design and Characterization of High-Voltage 4H-SiC p-IGBTs
2008 · Qingchun Zhang, Alex Q. Huang, et al. · IEEE Transactions on Electron Devices · 58
Development of 15 kV 4H-SiC IGBTs
2012 · Sei Hyung Ryu, Lin Cheng, et al. · Materials science forum · 55
High performance, ultra high voltage 4H-SiC IGBTs
2012 · Sei-Hyung Ryu, Craig Capell, et al. · IEEE Energy Conversion Congress and Exposition (ECCE) · 52
Ultra high voltage IGBTs in 4H-SiC
2013 · S. Ryu, C. Capell, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 46
Ultra high voltage MOS controlled 4H-SiC power switching devices
2015 · S Ryu, C Capell, et al. · Semiconductor Science and Technology · 43
12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
2008 · Q. Jon Zhang, Charlotte Jonas, et al. · Materials science forum · 35
20 kV 4H-SiC N-IGBTs
2014 · Sei Hyung Ryu, Craig Capell, et al. · Materials science forum · 31
Design and Fabrications of High Voltage IGBTs on 4H-SiC
2006 · Qingchun Zhang, C. Jonas, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 31
Performance of 60 A, 1200 V 4H-SiC DMOSFETs
2009 · Brett A. Hull, Charlotte Jonas, et al. · Materials science forum · 28
3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications
2011 · Sei-Hyung Ryu, Lin Cheng, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 24
1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70
2007 · Charlotte Jonas, Craig Capell, et al. · Journal of Electronic Materials · 23
9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on
2007 · Qing Chun Jon Zhang, Charlotte Jonas, et al. · Materials science forum · 23
900V silicon carbide MOSFETs for breakthrough power supply design
2015 · Vipindas Pala, Adam Barkley, et al. · IEEE Energy Conversion Congress and Exposition (ECCE) · 20
Critical Technical Issues in High Voltage SiC Power Devices
2008 · Anant K. Agarwal, Albert A. Burk, et al. · Materials science forum · 20
15 kV IGBTs in 4H-SiC
2013 · Sei Hyung Ryu, Craig Capell, et al. · Materials science forum · 18
15 kV n-GTOs in 4H-SiC
2019 · Sei Hyung Ryu, Daniel J. Lichtenwalner, et al. · Materials science forum · 16
New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C
2007 · Oingchun Zhang, C. Jonas, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 16
16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
2013 · Lin Cheng, Anant K. Agarwal, et al. · Materials science forum · 14
A 10-kV Monolithic Darlington Transistor With $\beta_{ \rm forced}$ of 336 in 4H-SiC
2008 · Qingchun Zhang, C. Jonas, et al. · IEEE Electron Device Letters · 13
Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed
2017 · Q.J. Zhang, G. Wang, et al. · Materials science forum · 12
Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15 kV 4H-SiC P-GTO Thyristor
2017 · Sei Hyung Ryu, Daniel J. Lichtenwalner, et al. · Materials science forum · 11
An Analysis of Forward Conduction Characteristics of Ultra High Voltage 4H-SiC N-IGBTs
2016 · Sei Hyung Ryu, Craig Capell, et al. · Materials science forum · 11
Works count: 42
Citation count: 919
H-index: 18
I10-index: 29
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