Work

Ultra high voltage (>12 kV), high performance 4H-SiC IGBTs

Year: 2012

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2012.6229072

Authors: Sei-Hyung Ryu, Craig Capell, Charlotte Jonas, Lin Cheng, Michael O'Loughlin, Al Burk, Anant Agarwal, John Palmour, Allen Hefner

Institutions: Wolfspeed, Inc. (United States), National Institute of Standards and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2107865099

FWCI: 11.78

Cites: 4

Cited by: 80

Related to: 10