1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70
Year: 2007
Type: article
Source: Journal of Electronic Materials
Authors: Charlotte Jonas, Craig Capell, Al Burk, Qingchun Zhang, Robert Callanan, Anant Agarwal, Bruce Geil, Charles Scozzie
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Army Research Laboratory
OpenAlex ID: W1978399409