Work

New Improvement Results on 7.5 kV 4H-SiC p-IGBTs with Rdiff, on of 26 mΩ·cm2 at 25°C

Year: 2007

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2007.4294987

Authors: Oingchun Zhang, C. Jonas, R. Callanan, J. Sumakeris, M. Das, A. Agarwal, J. Palmour, Sei-Hyung Ryu, Jun Wang, Alex Huang

Institutions: Wolfspeed, Inc. (United States), Wayne State University, North Carolina State University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2157547149

FWCI: 2.008

Cites: 5

Cited by: 16

Related to: 10