A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching
Year: 2008
Type: article
Abstract: For the first time, high power 4H-SiC n-IGBTs have been demonstrated with 13 kV blocking and a low Rdiff,on of 22 mWcm2 which surpasses the 4H-SiC material limit for unipolar devices. Normally-off operation and >10 kV blocking is maintained up to 200oC base plate temperature. The on-state resistance has a slight positive temperature coefficient which makes the n-IGBT attractive for parallel configurations. MOS characterization reveals a low net positive fixed charge density in the oxide and a low interface trap density near the conduction band which produces a 3 V threshold and a peak channel mobility of 18 cm2/Vs in the lateral MOSFET test structure. Finally, encouraging device yields of 64% in the on-state and 27% in the blocking indicate that the 4H-SiC n-IGBT may eventually become a viable power device technology.
Source: Materials science forum
Institutions: Wolfspeed, Inc. (United States), Cree (China)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2027474129